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更多>>QuartzCom提供廣泛的VCTCXO振蕩器VTX7T-STR3產品系列
來源：http://www.jqhs.com.cn 作者：康比電子 2024年04月19
QuartzCom提供廣泛的VCTCXO振蕩器VTX7T-STR3產品系列
QuartzCom是頻率控制產品的領先提供商。我們自豪地提供市場上最具創新設計的壓電振蕩元件。我們與客戶和供應商一起創造引領潮流的解決方案。我們保證以高質量生產非常可靠且成本可控的產品。全球領先的電子制造商選擇晶振廠家QuartzCom是因為其響應時間短、靈活性強、交貨時間短以及基于長期經驗的深厚技術支持。我們認為我們的主要任務是：
●為我們的客戶提供全套最先進的頻率控制產品。
●通過我們的服務保持并不斷提高我們的質量。
產品組合：壓電元件，如晶體單元、石英晶體振蕩器(XO、VCXO、TCXO、VC-TCXO、OCXO)、濾波器(石英、SAW和陶瓷)、傳感器和壓控振蕩器(VCO)；SMD和有引腳封裝，封裝尺寸從1.6 x 2.0 mm的最小晶振單元到50 x 50 mm的DOCXO，頻率范圍從32.768 kHz到5GHz
QuartzCom專注于自己的TCXO和VC-TCXO有源晶振產品：
高精度、低G靈敏度、高抗震:
定位和導航:伽利略、GLONASS、北斗、全球定位系統
溝通:測量、SONET / SDH、移動回程、音頻和視頻、廣播、
用于UMTS、W-CDMA、TD-SCDMA、LTE、TETRA、微微蜂窩、毫微微蜂窩的基站，...
區塊升降轉換器的抗振性（低沖擊噪聲）
-在瑞士開發和生產
-質量、可靠性、靈活性、客戶定制
-小型封裝尺寸（5x3.2毫米、7x5毫米、14x9毫米）
-高頻率穩定性（-40至+85°C溫度范圍內為0.1 ppm）
-頻率范圍（從5到150兆赫）
-寬溫度范圍（-55至+95°C）
-高抗沖擊和振動性
-低重力敏感度（0.1 ppb/g）
-低相位噪聲和抖動
-低滯后
QuartzCom提供廣泛的TCXO振蕩器產品系列。從小型2.5x2.0毫米貼片晶振到14x9毫米高頻200兆赫型。第三層用于網絡同步，高精度；移動無線電為0,25ppm，微微蜂窩和毫微微蜂窩為0.1ppm此外，衛星通信的低相位噪聲。
溫度補償Xtal振蕩器- SMD型
應用：TDM網絡、SONET/SDH（第三層），同步設備定時源，無線回程（同步以太網，IEEE 1588 v2），城域電信級以太網、微微蜂窩、毫微微蜂窩
特點：保持穩定性:24小時內為0.37ppm，整體穩定性:4.60ppm，包括20年老化，短期老化，G.813選項1:24小時@+25°C下0.01ppm
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» Technical Guidance (165 kB)
VTX20
| Frequency range: | 10 ~ 52 MHz |
| Frequency stability: | ±0.5 ppm ~ ±2.5 ppm |
| Supply voltage: | 1.8 V ~ 3.3 V |
| Output signal: | Clipped Sine Wave |
| Size: | 2.0 x 1.65 mm |
VTX25
| Frequency range: | 10 ~ 52 MHz |
| Frequency stability: | ±0.5 ~ ±2.5 ppm |
| Supply voltage: | 1.8 V ~ 3.3 V |
| Output signal: | Clipped Sine Wave |
| Size: | 2.5 x 2.0 mm |
TX25-H
| Frequency range: | 10 ~ 60 MHz |
| Frequency stability: | ±2.5 ~ ±10 ppm |
| Supply voltage: | 1.8 V, 2.5V, 3.3 V |
| Output signal: | CMOS |
| Size: | 2.5 x 2.0 mm |
VTX32
| Frequency range: | 10 ~ 52 MHz |
| Frequency stability: | ±0.5 ~ ±2.5 ppm |
| Supply voltage: | 1.8V ~ 3.3 V |
| Output signal: | Clipped Sine Wave |
| Size: | 3.2 x 2.5 mm |
TX32T-H
| Frequency range: | 10 ~ 60 MHz |
| Frequency stability: | ±2.5 ~ ±10 ppm |
| Supply voltage: | 1.8 V, 2.5V, 3.3 V |
| Output signal: | (LV)CMOS |
| Size: | 3.2 x 2.5 mm |
VTX5S
| Frequency range: | 5 ~ 60 MHz |
| Frequency stability: | ±0.1 - ±1.5 ppm |
| Supply voltage: | 2.5 V ~ 3.3 V |
| Output signal: | CMOS or Clipped Sine Wave |
| Size: | 5.0 x 3.2 mm |
TX5S-STR3
| Frequency range: | 5 ~ 50 MHz |
| Frequency stability: | ±4.60 ppm over all inclusive |
| Supply voltage: | 2.5 V ~ 3.3 V |
| Output signal: | CMOS or Clipped Sine Wave |
| Size: | 5.0 x 3.2 mm |
VTX5T
| Frequency range: | 10 ~ 52 MHz |
| Frequency stability: | ±0.5 ~ ±2.5 ppm |
| Supply voltage: | 1.8 V ~ 3.3 V |
| Output signal: | CMOS or Clipped Sine Wave |
| Size: | 5.0 x 3.2 mm |
VTX7S
| Frequency range: | 5 ~ 70 MHz |
| Frequency stability: | ±0.10 ~ ±1.5 ppm |
| Supply voltage: | 2.5 V ~ 3.3 V |
| Output signal: | CMOS or Clipped Sine Wave |
| Temperature range: | -55 to +105° C |
| Size: | 7.0 x 5.0 mm |
VTX7S-STR3
| Frequency range: | 5 ~ 52 MHz |
| Frequency stability: | ±4.6 ppm over all |
| Supply voltage: | 2.5 V ~ 3.3 V |
| Output signal: | HCMOS or Clipped Sine Wave |
| Size: | 7.0 x 5.0mm |
VTX7T
| Frequency range: | 5 ~ 52 MHz |
| Frequency stability: | ±0.1 ~ ±1.5 ppm |
| Supply voltage: | 2.5 V ~ 2.3 V |
| Output signal: | (LV)CMOS or Clipped Sine Wave |
| Temperature range: | -55 to +105° C |
|
Size: |
7.0 x 5.0 mm |
VTX7T-STR3
| Frequency range: | 5 ~ 52 MHz |
| Frequency stability: | ±4.6 ppm over all |
| Supply voltage: | 2.5 V or 3.3 V |
| Output signal: | CMOS or Clipped Sine Wave |
|
Size: |
7.0 x 5.0 mm |
VTX7R-LG
| Frequency range: | 5 ~ 50 MHz |
| Frequency stability: | ±0.25 ~ ±1.5 ppm |
| Supply voltage: | 2.5 V ~ 3.3 V |
| Output signal: | CMOS or Clipped Sine Wave |
| Low G-Sensitivity: | <0.25 ppb/G |
| Size: | 7.0 x 5.0 mm |
VTX7Q-LG
| Frequency range: | 5 ~ 50 MHz |
| Frequency stability: | ±0.25 ~ ±1.5 ppm |
| Supply voltage: | 2.5 V ~ 3.3 V |
| Output signal: | CMOS or Clipped Sine Wave |
| Low G-Sensitivity: | <0,25 ppb/g |
| Size: | 7.0 x 5.0 mm |
VTX5E
| Frequency range: | 8 ~ 52 MHz |
| Frequency stability: | ±0.25 ~ ±1.5 ppm |
| Supply voltage: | 2.8 V or 3.3 V |
| Output signal: | CMOS or Clipped Sine Wave |
| Size: | 7.0 x 3.2 mm |
VTX7E
| Frequency range: | 8 ~ 52 MHz |
| Frequency stability: | ±0.25 ~ ±1.5 ppm |
| Supply voltage: | 2.8 V or 3.3 V |
| Output signal: | CMOS or Clipped Sine Wave |
| Size: | 7.0 x 5.0 mm |
VTX7F
| Frequency range: | 8 ~ 52 MHz |
| Frequency stability: | ±0.25 ~ ±1.5 ppm |
| Supply voltage: | 2.8 V or 3.3 V |
| Output signal: | CMOS or Clipped Sine Wave |
| Size: | 7.0 x 5.0 mm |
VTX14M
| Frequency range: | 40 ~ 160 MHz |
| Frequency stability: | ±0.10 ~ ±1.5 ppm |
| Supply voltage: | 3.3 V |
| Output signal: | HCMOS or SineWave |
| Size: | 14.0 x 9.0 mm |
TX14T
» Technical Guidance (117 kB)
| Frequency range: | 10 ~ 100 MHz |
| Frequency stability: | ±0.10 ~ ±1.5 ppm |
| Supply voltage: | 3.3 V |
| Output signal: | HCMOS or SineWave |
| Frequency adjustment: | ±5 ppm with internal trimmer |
| Size: | 14.0 x 9.0 mm |
VTX14F
| Frequency range: | 10 ~ 60 MHz |
| Frequency stability: | ±0.10 ~ ±1.5 ppm |
| Supply voltage: | 3.3 V |
| Output signal: | HCMOS or SineWave |
| Size: | 14.0 x 9.0 mm |
VTX14M-LG
| Frequency range: | 10 ~ 160 MHz |
| Frequency stability: | ±0.5 ~ ±2.0 ppm |
| Supply voltage: | 3.3 V |
| Output signal: | HCMOS or SineWave |
| Low G-Sensitivity: | <0.25 ppB/g |
| Size: | 14.0 x 9.0 mm |
VTX11M
| Frequency range: | 50 ~ 160 MHz |
| Frequency stability: | ±0.25 ~ ±1.5 ppm |
| Supply voltage: | 3.3 V |
| Output signal: | HCMOS or SineWave |
| Size: | 11.4 x 9.6 mm |
VTX11F
| Frequency range: | 10 ~ 60 MHz |
| Frequency stability: | ±0.25 ~ ±1.5 ppm |
| Supply voltage: | 3.3 V |
| Output signal: | HCMOS or SineWave |
| Size: | 11.4 x 9.6 mm |
VTX11M-LG
| Frequency range: | 50 ~ 160 MHz |
| Frequency stability: | ±0.5 ~ ±1.5 ppm |
| Supply voltage: | 3.3 V |
| Output signal: | HCMOS or SineWave |
| Low G-Sensitivity: | <0.25 ppb/g |
| Size: | 11.4 x 9.6 mm |
VTX11L
| Frequency range: | 9.6 ~ 50 MHz |
| Frequency stability: | ±0.5 ~ ±2.5 ppm |
| Supply voltage: | 3.3 V, 3.3 V or 5.0 V |
| Output signal: | CMOS or Clipped Sine Wave |
| Size: | 11.4 x 9.6 mm |
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此文關鍵字： 壓控溫補晶體振蕩器
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